Semiconductor device and method of making

Abstract

The present disclosure is related to semiconductor technologies and discloses a semiconductor device and its method of making. In the present disclosure, a transistor's source and drain are led out by concurrently formed metal-semiconductor compound contact regions at the source and drain and metal-semiconductor compounds in vias formed at positions corresponding to the source and drain. Because the metal-semiconductor compound has relatively low resistivity, the resistance of the metal-semiconductor compounds in the vias can be minimized. Also, because the material used to fill the vias and the material forming the source/drain contact regions are both metal-semiconductor compound, contact resistance between the material filling the vias and the metal-semiconductor compound source/drain contact regions can be minimized. Furthermore, because the material filling the vias is metal-semiconductor compound, the conducting material in the vias and dielectric material in the insulator layer can form good interface and have good adhesion properties, and the conducting material would not cause structural damage in the dielectric material. Thus, there is no need to form a barrier layer between the insulator layer and the material filling the vias.