Chenxi Peng

Title: Innovations of Chenxi Peng in Integrated Circuit Technology

Introduction

Chenxi Peng is a notable inventor based in Chengdu, China, recognized for his contributions to microelectronic technology and integrated circuits. With a focus on enhancing the integration density of circuits, he has developed innovative solutions that address the limitations of traditional integrated circuit designs.

Latest Patents

Chenxi Peng holds two significant patents. The first patent is for a "Nano-wall integrated circuit structure with high integrated density." This invention introduces a nano-wall integrated circuit unit structure, known as Nano-Wall FET (NWaFET), which improves integration density, shortens channel lengths, and enhances the flexibility of device channel width-to-length ratio adjustments. The second patent is for a "Metal oxide semiconductor integrated circuit basic unit." This patent describes a basic unit that includes various semiconductor regions and electrodes, designed to optimize the performance of MOS integrated circuits.

Career Highlights

Chenxi Peng is affiliated with the University of Electronic Science and Technology of China, where he continues to advance research in integrated circuit technology. His work has significantly impacted the field, leading to more efficient and compact circuit designs.

Collaborations

Chenxi has collaborated with notable colleagues, including Ping Li and Yongbo Liao, contributing to various research projects and innovations in the field of microelectronics.

Conclusion

Chenxi Peng's innovative patents and contributions to integrated circuit technology highlight his role as a leading inventor in the field. His work continues to influence advancements in microelectronic technology, paving the way for future innovations.