Chengchung Lin

This inventor holds 1 USPTO granted patent. Top assignee: Sj Semiconductor (Jiangyin) Corporation. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chengchung Lin. Retrieved from https://idiyas.com/inventor/chengchung-lin-eyyi1ukr

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Chengchung Lin: Innovator in Stacked Memory Technology

Introduction

Chengchung Lin is a notable inventor recognized for his contributions to the field of semiconductor technology. He currently works at Sj Semiconductor (Jiangyin) Corporation, where he focuses on innovative memory solutions. His work has led to significant advancements in memory packaging methods.

Latest Patents

Chengchung Lin holds a patent for a "Stacked Memory Pop Structure and Packaging Method Thereof." This invention represents a crucial development in the efficiency and performance of memory devices. The patent showcases his expertise in creating advanced memory architectures.

Career Highlights

Throughout his career, Chengchung Lin has demonstrated a commitment to innovation in the semiconductor industry. His work at Sj Semiconductor has positioned him as a key player in the development of cutting-edge memory technologies. His contributions have been instrumental in enhancing the capabilities of modern electronic devices.

Collaborations

Chengchung Lin collaborates with fellow inventor Yenheng Chen, furthering the research and development of advanced semiconductor technologies. Their partnership exemplifies the importance of teamwork in driving innovation within the industry.

Conclusion

Chengchung Lin's work in stacked memory technology and his patent contributions highlight his role as a significant inventor in the semiconductor field. His ongoing efforts continue to shape the future of memory solutions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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