Cheng-Wei Peng

Title: Cheng-Wei Peng: Innovator in Memory Device Technology

Introduction

Cheng-Wei Peng is a prominent inventor based in Taipei, Taiwan. He has made significant contributions to the field of memory devices, particularly through his innovative patent. His work focuses on enhancing the efficiency and functionality of memory technology, which is crucial in today's digital age.

Latest Patents

Cheng-Wei Peng holds a patent for a memory device and its manufacturing method. The patent describes a memory device that includes a magnetic tunneling junction (MTJ) and a spin Hall electrode (SHE). The MTJ consists of a free layer, a reference layer, and a barrier layer situated between the two. The SHE is designed to convert a charge current into a spin current for programming the MTJ. Notably, the SHE is composed of an alloy that includes at least one heavy metal element and one light transition metal element, enhancing the device's performance.

Career Highlights

Cheng-Wei Peng is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His role at the company allows him to work on cutting-edge technologies and contribute to advancements in memory devices.

Collaborations

Cheng-Wei has collaborated with notable colleagues, including Yen-Lin Huang and Mingyuan Song. Their teamwork has fostered an environment of innovation and creativity, leading to significant advancements in their respective fields.

Conclusion

Cheng-Wei Peng is a key figure in the development of memory device technology, with a focus on innovative solutions that enhance performance. His contributions through patents and collaborations continue to shape the future of the semiconductor industry.