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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12156479 B1

PDFFull Text
Date of Patent:
Nov. 26, 2024

Filed:

Nov. 04, 2021

Memory device and manufacturing method thereof

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Yen-Lin Huang, Hsinchu, TW;

MingYuan Song, Hsinchu, TW;

Chien-Min Lee, Hsinchu, TW;

Shy-Jay Lin, Jhudong Township, TW;

Chi-Feng Pai, New Taipei, TW;

Chen-Yu Hu, New Taipei, TW;

Chao-Chung Huang, Neipu Township, TW;

Kuan-Hao Chen, Caotun Township, TW;

Chia-Chin Tsai, Kaohsiung, TW;

Yu-Fang Chiu, Taipei, TW;

Cheng-Wei Peng, New Taipei, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Kevin M Bernatz

Int. Cl.
CPC ...
H10N 50/85 (2023.01); C22C 5/04 (2006.01); H01F 10/32 (2006.01); H10B 61/00 (2023.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01); H10N 52/00 (2023.01); H10N 52/01 (2023.01); H10N 52/80 (2023.01);
U.S. Cl.
CPC ...
H10N 50/85 (2023.02); C22C 5/04 (2013.01); H01F 10/325 (2013.01); H01F 10/3254 (2013.01); H01F 10/329 (2013.01); H10B 61/10 (2023.02); H10B 61/22 (2023.02); H10N 50/10 (2023.02); H10N 50/80 (2023.02); H10N 52/00 (2023.02); H10N 52/01 (2023.02); H10N 52/80 (2023.02);
Abstract

A memory device and a manufacturing method thereof are provided. The memory device includes a magnetic tunneling junction (MTJ) and a spin Hall electrode (SHE). The MTJ includes a free layer, a reference layer and a barrier layer lying between the free layer and the reference layer. The SHE is in contact with the MTJ, and configured to convert a charge current to a spin current for programming the MTJ. The SHE is formed of an alloy comprising at least one heavy metal element and at least one light transition metal element. The heavy metal element is selected from metal elements with one or more valence electrons filling in 5d orbitals, and the light transition metal element is selected from transition metal elements with one or more valence electrons partially filling in 3d orbitals.

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