Shanghai, China

Cheng-Tai Huang

This inventor holds 8 USPTO granted patents and 1 EPO patent. Top assignees: Semiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation. Active years: 2016-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Cheng-Tai Huang. Retrieved from https://idiyas.com/inventor/cheng-tai-huang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

 

Average Co-Inventor Count = 3.1

ph-index = 3

Forward Citations = 16(Granted Patents)


Company Filing History:


Years Active: 2016-2020

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8 patents (USPTO):Explore Patents

Title: Cheng-Tai Huang: Innovator in Semiconductor Technology

Introduction

Cheng-Tai Huang is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology, holding a total of 8 patents. His work focuses on enhancing the performance and reliability of electronic components, particularly in memory circuits.

Latest Patents

One of his latest patents is the Static Random Access Memory (SRAM) array power supply circuit. This innovative circuit includes an SRAM test unit that mirrors the structure of a basic SRAM unit. It features a switch device connected to a power source, the SRAM test unit, and the SRAM array. A switch control circuit is also included, which ensures that when the test voltage in the SRAM test unit falls below a threshold, the switch device closes, allowing the power source to charge both the SRAM array and the test unit. This design provides a more stable output voltage, reducing susceptibility to external conditions such as temperature and pressure.

Another notable patent is the detection method and device for the process corner of MOS transistors. This method utilizes a ring oscillator composed of an odd number of oscillation units connected in series. The output port of one oscillation unit serves as the output for the ring oscillator, which generates an oscillation signal. By measuring the period and maintaining time of the oscillation signal, the process corner of both PMOS and NMOS transistors can be determined, enhancing the reliability of semiconductor devices.

Career Highlights

Cheng-Tai Huang has worked with leading companies in the semiconductor industry, including Semiconductor Manufacturing International Corporation in Shanghai and Beijing. His experience in these organizations has allowed him to develop and refine his innovative ideas, contributing to advancements in semiconductor technology.

Collaborations

Throughout his career, Cheng-Tai Huang has collaborated with talented individuals such as Chen-Yi Huang and Jiaqi Yang. These partnerships have fostered a creative environment that has led to the development of groundbreaking technologies.

Conclusion

Cheng-Tai Huang is a distinguished inventor whose work in semiconductor technology has resulted in several impactful patents. His innovative designs and collaborations continue to shape the future of electronic components.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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