Hsinchu, Taiwan

Cheng-Shien Chen

This inventor holds 1 USPTO granted patent. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2002.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Cheng-Shien Chen. Retrieved from https://idiyas.com/inventor/cheng-shien-chen

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 7(Granted Patents)


Company Filing History:


Years Active: 2002

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1 patent (USPTO):Explore Patents

Title: Innovations of Cheng-Shien Chen in Metal Wiring Fabrication

Introduction

Cheng-Shien Chen is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor manufacturing, particularly in the area of metal wiring fabrication. His innovative approach has led to the development of a unique sputtering method that enhances the performance and reliability of metal wiring.

Latest Patents

Cheng-Shien Chen holds a patent for an "Al-Cu alloy sputtering method with post-metal quench." This invention relates to a method of fabricating metal wiring, whereby sputtered metal is rapidly cooled down by a post-metal quenching process. This process is crucial in preventing deleterious CuAl precipitation, which can adversely affect the performance of semiconductor devices. The main embodiments of his patent include the formation of a TiN reactively sputtered bottom barrier layer, followed by a sputtered Al-Cu alloy wiring layer. This is immediately followed by an in situ post-metal quench, which is a key step in the process. The quenching is particularly effective when employing wafer backside cooling using low-temperature helium or argon gas. This cooling method reduces the substrate temperature from a high range of 450 to 150 °C to a low temperature near room temperature within a short time interval of 30 to 180 seconds. The prevention of CuAl precipitates is essential, as they can block the etch removal of the underlying TiN layer, causing electrical shorts between closely spaced lines.

Career Highlights

Cheng-Shien Chen is currently employed at Taiwan Semiconductor Manufacturing Company Limited, where he continues to innovate and contribute to advancements in semiconductor technology. His work has been instrumental in improving the efficiency and reliability of metal wiring in semiconductor devices.

Collaborations

Cheng-Shien Chen has collaborated with notable colleagues, including Chung Chang Liu and Chih-Min Wen. These collaborations have further enhanced the development and implementation of innovative technologies in the semiconductor industry.

Conclusion

Cheng-Shien Chen's contributions to the field of semiconductor manufacturing, particularly through his patented Al-Cu alloy sputtering method, demonstrate his commitment to innovation and excellence. His work not only advances technology but also plays a crucial role in the reliability of modern electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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