Taipei, Taiwan

Cheng-Kung Lu

This inventor holds 1 USPTO granted patent. Top assignee: Nan Ya Technology Corporation. Active years: 2006.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Cheng-Kung Lu. Retrieved from https://idiyas.com/inventor/cheng-kung-lu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2006

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1 patent (USPTO):Explore Patents

Title: Innovations of Cheng-Kung Lu in Optical Proximity Effect Correction

Introduction

Cheng-Kung Lu is a notable inventor based in Taipei, Taiwan. He has made significant contributions to the field of optical proximity effect correction, particularly in the context of contact holes. His innovative methods have implications for the semiconductor manufacturing industry.

Latest Patents

Cheng-Kung Lu holds a patent titled "Method of correcting optical proximity effect of contact holes." This patent describes a method for forming corresponding relations between mask critical dimensions (mCDs) and photoresist critical dimensions (pCDs) for each pitch (d). The method involves correcting each mCD for various combinations of pCDs and pitches. The corrections are applied to the processing mask pattern, ensuring that the first corrected contact hole maintains the same area and center as the uncorrected contact hole.

Career Highlights

Cheng-Kung Lu is currently employed at Nan Ya Technology Corporation, where he continues to develop innovative solutions in his field. His work has been instrumental in advancing technologies related to optical proximity effects.

Collaborations

Cheng-Kung Lu collaborates with several talented individuals, including Wen-Bin Wu and Tsan Lu. Their combined expertise contributes to the success of their projects and innovations.

Conclusion

Cheng-Kung Lu's contributions to optical proximity effect correction demonstrate his expertise and commitment to innovation in the semiconductor industry. His patent and ongoing work at Nan Ya Technology Corporation highlight the importance of advancements in this critical area.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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