The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2006
Filed:
Jun. 18, 2004
Tsan LU, Taipei, TW;
Wen-bin Wu, Taoyuan, TW;
Yung-long Hung, Taipei, TW;
Cheng-kung LU, Taipei, TW;
Tsan Lu, Taipei, TW;
Wen-Bin Wu, Taoyuan, TW;
Yung-Long Hung, Taipei, TW;
Cheng-Kung Lu, Taipei, TW;
Nanya Technology Corporation, Taoyuan, TW;
Abstract
A method of correcting optical proximity effect of contact holes. Corresponding relations between mask critical dimensions (mCDs) and photoresist critical dimensions (pCDs) for each pitch (d) are formed. Correction of each mCD for each combination of pCDs and pitches is determined based on the corresponding relations. The correction is used first to correct each contact hole of a processing mask pattern. The first corrected contact hole of the processing mask pattern is corrected again to a square having the same area as the first corrected contact hole and the same center as the uncorrected contact hole.