Company Filing History:
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Years Active: 2006-2009
Title: Innovations of Cheng-Hsing Chen in TFT Technology
Introduction
Cheng-Hsing Chen is a notable inventor based in Taoyuan, Taiwan. He has made significant contributions to the field of thin-film transistors (TFT) technology, particularly in methods that prevent metal layer diffusion during fabrication processes. With a total of 2 patents, his work has implications for improving the reliability and efficiency of TFT manufacturing.
Latest Patents
Cheng-Hsing Chen's latest patents include a manufacturing method for a TFT electrode designed to prevent metal layer diffusion. This method involves several steps, including providing a substrate, forming a first metal layer, and performing photolithography and etching processes to create a gate electrode. Additionally, a transparent conducting electrode is formed to cover the gate electrode, which serves to prevent metal ion diffusion during fabrication. Another significant patent focuses on the structure of the TFT electrode itself, which aims to reduce contamination risks during the chemical vapor deposition process by using a transparent pixel electrode as a barrier against metal diffusion.
Career Highlights
Throughout his career, Cheng-Hsing Chen has worked with prominent organizations such as the Taiwan TFT LCD Association and Chunghwa Picture Tubes, Ltd. His experience in these companies has allowed him to develop and refine his innovative techniques in TFT technology.
Collaborations
Cheng-Hsing Chen has collaborated with notable colleagues, including Cheng-Chung Chen and Yu-Chang Sun. These partnerships have contributed to the advancement of his research and the successful implementation of his patented technologies.
Conclusion
Cheng-Hsing Chen's contributions to TFT technology through his innovative patents and collaborations highlight his role as a key figure in the field. His work continues to influence the manufacturing processes and reliability of TFT devices.