The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2009
Filed:
Mar. 15, 2006
Cheng-chung Chen, I Lan Hsien, TW;
Yu-chang Sun, Hsintien, TW;
Yi-hsun Huang, Hsin Chu, TW;
Chien-wei Wu, Chu Pei, TW;
Shuo-wei Liang, Pan Chiao, TW;
Chia-hsiang Chen, Tai Nan Hsien, TW;
Chi-shen Lee, Hsin Chu, TW;
Chai-yuan Sheu, Tai Nan Hsien, TW;
Yu-chi Lee, Taipei, TW;
Te-ming Chu, Tao Yuan Hsien, TW;
Cheng-hsing Chen, Tao Yuan, TW;
Cheng-Chung Chen, I Lan Hsien, TW;
Yu-Chang Sun, Hsintien, TW;
Yi-Hsun Huang, Hsin Chu, TW;
Chien-Wei Wu, Chu Pei, TW;
Shuo-Wei Liang, Pan Chiao, TW;
Chia-Hsiang Chen, Tai Nan Hsien, TW;
Chi-Shen Lee, Hsin Chu, TW;
Chai-Yuan Sheu, Tai Nan Hsien, TW;
Yu-Chi Lee, Taipei, TW;
Te-Ming Chu, Tao Yuan Hsien, TW;
Cheng-Hsing Chen, Tao Yuan, TW;
Taiwan TFT LCD Association, Hsinchu, TW;
Chunghwa Picture Tubes, Ltd., Taoyuan, TW;
AU Optronics Corp., Hsinchu, TW;
Quanta Display Inc., Tao Yuan Shien, TW;
Hannstar Display Corp., Taipei, TW;
Chi Mei Optoelectronics Corp., Tainan County, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Toppoly Optoelectronics Corp., Miao-Li County, TW;
Abstract
A manufacturing method for a TFT electrode which is implemented to prevent metal ion diffusion to an adjacent insulating layer during fabrication. The method includes, in the order recited, providing a substrate; forming a first metal layer on the substrate which is comprised of one of a single metal layer structure or a multiple metal layer structure; performing a photolithography and etching process on the first metal layer to form a gate electrode of the TFT electrode; forming a transparent conducting electrode on the first metal layer to cover at least the gate electrode and prevent metal ion diffusion during fabrication, the transparent conducting electrode being comprised of one of indium tin oxide, indium zinc oxide, ZnO or an organic material; and forming a pixel electrode which functions as a barrier to prevent metal ion diffusion during fabrication by performing a photolithography and etching process on the transparent conducting electrode.