The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2006
Filed:
Oct. 15, 2004
Cheng-chung Chen, I Lan Hsien, TW;
Yu-chang Sun, Hsintien, TW;
Yi-hsun Huang, Hsin Chu, TW;
Chien-wei Wu, Chu Pei, TW;
Shuo-wei Liang, Pan Chiao, TW;
Chia-hsiang Chen, Tai Nan Hsien, TW;
Chi-shen Lee, Hsin Chu, TW;
Chai-yuan Sheu, Tai Nan Hsien, TW;
Yu-chi Lee, Taipei, TW;
Te-ming Chu, Tao Yuan, TW;
Cheng-hsing Chen, Tao Yuan, TW;
Cheng-Chung Chen, I Lan Hsien, TW;
Yu-Chang Sun, Hsintien, TW;
Yi-Hsun Huang, Hsin Chu, TW;
Chien-Wei Wu, Chu Pei, TW;
Shuo-Wei Liang, Pan Chiao, TW;
Chia-Hsiang Chen, Tai Nan Hsien, TW;
Chi-Shen Lee, Hsin Chu, TW;
Chai-Yuan Sheu, Tai Nan Hsien, TW;
Yu-Chi Lee, Taipei, TW;
Te-Ming Chu, Tao Yuan, TW;
Cheng-Hsing Chen, Tao Yuan, TW;
Taiwan TFT LCD Association, Hsinchu, TW;
Chunghwa Picture Tubes, Ltd., Taoyuan, TW;
Au Optronics Corp, Hsinchu, TW;
Quanta Display Inc., Tao Yuan Shien, TW;
Hannstar Display Corp, Taipei, TW;
Chi Mei Optoelectronics Corp., Tainan, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Toppoly Optoelectronics Corp., Miao-Li, TW;
Abstract
The invention provides a TFT electrode structure and its manufacturing method that can prevent metal diffusion occurring in the fabrication of a TFT, and thereby reduce the risk of contamination of the chemical vapor deposition process due to metallic ion diffusion. The transparent pixel electrode is formed after the gate electrode metal so that the pixel transparent electrode can be used as a barrier layer to prevent metal diffusion under high temperature from the gate electrode metal to adjacent insulating layers or the active layer. Further, the method used to form the transparent pixel electrode is a low-temperature physical vapor deposition process, which affected less by the processing environment, and the transparent pixel electrode is a conductive layer that is not affected by metal diffusion.