Songshan District, Taiwan

Cheng-En Lue


Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2013

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1 patent (USPTO):Explore Patents

Title: The Innovations of Cheng-En Lue

Introduction

Cheng-En Lue is a notable inventor based in Songshan District, Taiwan. He has made significant contributions to the field of electronics, particularly in the development of sensitive field effect transistor technology. His work focuses on enhancing the sensitivity of devices that detect hydrogen ions, which has important applications in various industries.

Latest Patents

Cheng-En Lue holds a patent for a Sensitive Field Effect Transistor Apparatus. This invention discloses a sensitive field effect transistor apparatus that utilizes an inorganic membrane to sense hydrogen ions. The apparatus employs a membrane with high deformation stress, allowing for adjustments in sensitivity by altering the membrane thickness and changing the substrate type and doped concentration. A differential amplifier is incorporated to read signals, forming the Inorganic Ion Sensitive Field Effect Transistor/Reference Field Effect Transistor apparatus.

Career Highlights

Cheng-En Lue is affiliated with Chang Gung University, where he continues to advance his research and innovation in the field of electronics. His work has garnered attention for its potential to improve sensor technology and its applications in various scientific and industrial fields.

Collaborations

Cheng-En Lue has collaborated with notable colleagues, including Chao-Sung Lai and Chia-Ming Yang. These collaborations have contributed to the advancement of research and development in their respective fields.

Conclusion

Cheng-En Lue's innovative work in sensitive field effect transistors showcases his commitment to advancing technology in electronics. His contributions are paving the way for future developments in sensor technology.

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