The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2013
Filed:
Nov. 20, 2009
Chao-sung Lai, Tao-Yuan, TW;
Cheng-en Lue, Songshan District, TW;
Chia-ming Yang, Ziguan Township, Kaohsiung County, TW;
Szu-chieh Wang, Xindian, TW;
Chao-Sung Lai, Tao-Yuan, TW;
Cheng-En Lue, Songshan District, TW;
Chia-Ming Yang, Ziguan Township, Kaohsiung County, TW;
Szu-Chieh Wang, Xindian, TW;
Chang Gung University, , TW;
Abstract
The invention discloses a sensitive field effect transistor apparatus, which uses an inorganic membrane to sense hydrogen ions. The invention adopts the membrane with high deformation stress. The sensitivity of the sensitive membrane to hydrogen ions is adjusted through altering the membrane thickness and changing the substrate type and doped concentration. A differential amplifier is used to read a signal to form the inorganic Ion Sensitive Field Effect Transistor/Reference Field Effect Transistor apparatus.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile