Taipei, Taiwan

Cheng-Chen Huseh


Average Co-Inventor Count = 2.3

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2004-2007

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3 patents (USPTO):Explore Patents

Title: Cheng-Chen Huseh: Innovator in Memory Device Technology

Introduction

Cheng-Chen Huseh is a prominent inventor based in Taipei, Taiwan. He has made significant contributions to the field of memory devices, holding a total of 3 patents. His work focuses on improving the structures and methods used in memory technology, which is crucial for the advancement of electronic devices.

Latest Patents

One of Cheng-Chen Huseh's latest patents is titled "Memory device and method for forming a passivation layer thereon." This invention presents a memory device with an improved passivation structure. The device includes a semiconductor substrate with memory units, an interconnect structure that connects to these memory units, and a passivation structure that covers the interconnect. The passivation structure consists of a dielectric layer and a silicon-oxy-nitride (SiOxNy) layer, enhancing the overall performance and reliability of the memory device.

Career Highlights

Cheng-Chen Huseh is currently employed at Macronix International Co., Ltd., where he continues to innovate in the field of memory technology. His expertise and dedication have positioned him as a key player in the development of advanced memory solutions.

Collaborations

Cheng-Chen has collaborated with notable coworkers, including Hung-Yu Chiu and U-Way Tseng. Their combined efforts contribute to the innovative projects at Macronix International Co., Ltd.

Conclusion

Cheng-Chen Huseh's work in memory device technology exemplifies the importance of innovation in the electronics industry. His patents and contributions continue to shape the future of memory devices, ensuring enhanced performance and reliability in various applications.

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