Chen Yuan Lee

Title: Innovations by Chen Yuan Lee

Introduction

Chen Yuan Lee is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of materials science, particularly in the identification of defects in crystals. His innovative approach has implications for various applications in semiconductor technology.

Latest Patents

Chen Yuan Lee holds a patent for a method of identifying defects in crystals. This method involves slicing a silicon carbide crystal to obtain a test piece, followed by an etching process. The etching conditions utilize an etchant that includes potassium hydroxide, performed at temperatures ranging from 400° C. to 550° C. in an environment where dry air or oxygen is introduced. This process results in the formation of etching pits of threading edge dislocations (TED) and threading screw dislocations (TSD) in the test piece. The diameter ratio of the etching pits observed by an optical microscope is maintained within a range of 0.2 to 0.5.

Career Highlights

Chen Yuan Lee is currently employed at GlobalWafers Co., Ltd., where he continues to advance his research and development efforts. His work has been instrumental in enhancing the quality and performance of semiconductor materials.

Collaborations

Some of his notable coworkers include Bing-Yue Tsui and Cheng-Jui Yang, who have collaborated with him on various projects related to crystal defect identification.

Conclusion

Chen Yuan Lee's innovative methods for identifying defects in crystals represent a significant advancement in materials science. His contributions are vital for the ongoing development of semiconductor technologies.