This inventor holds 2 USPTO granted patents. Top assignee: Mosel Vitelic Corporation. Active years: 1999-2000.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1999-2000
Title: Chen Kuang-Chao: Innovator in Dielectric Planarization and Isolation Techniques
Introduction
Chen Kuang-Chao is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in dielectric planarization and isolation methods. With a total of 2 patents, his work has advanced the efficiency and effectiveness of integrated circuit manufacturing.
Latest Patents
Chen's latest patents include a process for intermetal SOG/SOP dielectric planarization. This innovative process describes a method that does not adversely affect the substrate. Initially, a silicon-rich oxide (SRO) layer is formed on the substrate surface. Subsequently, a metal layer and an antireflective coating (ARC) layer are deposited over the SRO layer. These layers are then etched to define metal patterns using conventional lithography and etching techniques. Following this, an Ozone-TEOS (O.sub.3 -TEOS) layer and a SOG layer are formed over the entire substrate surface. The O.sub.3 -TEOS layer and SOG layer undergo etching back treatment to achieve a planar substrate surface, leaving only a small portion of the O.sub.3 -TEOS layer on the substrate. The etching back treatment can utilize PEB, TEB, or CMP techniques. Finally, a passivation layer is deposited over the remaining O.sub.3 -TEOS layer.
Another notable patent is the method of micro-trench oxidation using a rough oxide mask for field isolation. This method begins with the formation of a first dielectric layer on a silicon substrate. The first dielectric layer is patterned to define both active device and isolation regions. A very thin layer of silicon dioxide is then formed over the silicon substrate, followed by the deposition of a rough oxide layer with appropriate grain size. The rough oxide grains serve as an etching mask, allowing the silicon dioxide layer and the underlying silicon substrate to be etched, creating multiple trenches in the isolation region. After stripping the rough oxide grains and silicon dioxide layers, field oxidation is performed to complete the field oxide isolation formation.
Career Highlights
Chen Kuang-Chao is currently employed at Mosel Vitelic Corporation, where he continues to innovate in semiconductor technologies. His work has been instrumental in enhancing the manufacturing processes of integrated circuits.
Collaborations
Chen has collaborated with
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile