Campbell, CA, United States of America

Chen-ju Hsieh

USPTO Granted Patents = 2 

Average Co-Inventor Count = 4.8

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2022-2023

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2 patents (USPTO):Explore Patents

Title: Innovations by Chen-ju Hsieh

Introduction

Chen-ju Hsieh is an accomplished inventor based in Campbell, CA (US). He has made significant contributions to the field of memory technology, holding 2 patents that showcase his innovative approach to solving complex engineering challenges.

Latest Patents

One of his latest patents is for a Low-leakage drain-programmed ROM. This invention includes a diffusion region that spans the width of a bitcell, forming a drain for both a first and a second transistor. A bit line lead in a metal layer adjacent to the diffusion region extends across the width of the bitcell. The design incorporates a first via that connects to the drain of the first transistor and a second via that connects to the drain of the second transistor.

Another notable patent is focused on Memory write methods and circuits. This implementation provides systems and methods for writing data to memory bit cells. It features a write circuit that connects both a bitline and a complementary bitline to power (VDD) using positive-channel metal oxide semiconductor (PMOS) transistors. By utilizing PMOS transistors instead of NMOS transistors, this design avoids voltage drops between VDD and the bitlines, allowing them to reach a substantially full VDD voltage level. This innovation enhances writability and static noise margin compared to other implementations.

Career Highlights

Chen-ju Hsieh is currently employed at Qualcomm Incorporated, a leading company in the telecommunications and semiconductor industry. His work at Qualcomm has allowed him to apply his expertise in memory technology and contribute to cutting-edge advancements in the field.

Collaborations

Throughout his career, Chen-ju has collaborated with talented individuals such as Xiao Chen and Chulmin Jung. These collaborations have fostered an environment of innovation and creativity, leading to the development of impactful technologies.

Conclusion

Chen-ju Hsieh's contributions to memory technology through his patents reflect his dedication to innovation and engineering excellence. His work continues to influence advancements in the field, making him a notable figure in the world of inventors.

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