Xiamen, China

Chen Feng Wang

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: United Semiconductor (Xiamen) Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chen Feng Wang. Retrieved from https://idiyas.com/inventor/chen-feng-wang-51ue1j0h

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Innovations by Chen Feng Wang

Introduction

Chen Feng Wang is a notable inventor based in Xiamen, China. He has made significant contributions to the field of semiconductor technology. His innovative approach has led to the development of a unique method for detecting defects in wafers.

Latest Patents

One of his key patents is titled "Method for detecting back surface of wafer." This invention provides a systematic approach to identifying defects on the back surface of a wafer. The method involves capturing a gray scale map of the wafer's back surface, analyzing deviations in the map to identify defects, and transmitting this data to a system for further judgment.

Career Highlights

Chen Feng Wang is currently employed at United Semiconductor (Xiamen) Co., Ltd. His work at this company has been instrumental in advancing semiconductor manufacturing processes. He holds a total of 1 patent, showcasing his innovative capabilities in the industry.

Collaborations

Throughout his career, Chen has collaborated with talented individuals such as Ching-Shu Lo and Tsung Che Lin. These collaborations have further enriched his work and contributed to the success of various projects.

Conclusion

Chen Feng Wang's contributions to semiconductor technology through his innovative patent demonstrate his expertise and commitment to advancing the field. His work continues to impact the industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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