Hsinchu, Taiwan

Che Chia Chang

This inventor holds 1 USPTO granted patent and 4 published patent applications. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Che Chia Chang. Retrieved from https://idiyas.com/inventor/che-chia-chang-0q2k8nge

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Che Chia Chang - Innovator in Molybdenum-Containing Device-Level Interconnects

Introduction

Che Chia Chang is an inventor based in Hsinchu City, Taiwan. He is known for his innovative work in the field of device-level interconnects, particularly focusing on molybdenum-containing materials. Although he currently holds no granted patents, his contributions to the field are noteworthy.

Latest Patent Applications

Che Chia Chang's latest patent application is titled "Molybdenum-Containing Device-Level Interconnects and Methods of Fabrication Thereof." This application discloses middle-of-line (MOL) interconnects and techniques for forming these interconnects. An exemplary MOL interconnect structure includes a barrier-free source/drain contact, a barrier-free source/drain via, and a barrier-free gate via disposed in an insulator layer. The barrier-free source/drain contact is situated on an epitaxial source/drain and comprises tungsten, molybdenum, or a combination thereof. The barrier-free source/drain via is positioned on the barrier-free source/drain contact and includes molybdenum. Additionally, the barrier-free gate via is located on a gate stack adjacent to the epitaxial source/drain and also includes tungsten, molybdenum, or a combination thereof. Notably, the width of the barrier-free source/drain via and/or the barrier-free gate via may be less than about 16 nm. These components may be formed simultaneously through a bottom-up deposition process.

Conclusion

Che Chia Chang's work in developing advanced interconnect technologies highlights his innovative approach to materials science and fabrication methods. His latest patent application reflects significant advancements in the field, showcasing his potential as an inventor.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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