Hsinchu, Taiwan

Che-Chi Shih

This inventor holds 1 USPTO granted patent and 2 published patent applications. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Che-Chi Shih. Retrieved from https://idiyas.com/inventor/che-chi-shih-uyrnl30q

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 9.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Che-Chi Shih: Innovator in Semiconductor Technology

Introduction

Che-Chi Shih is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique isolation structure for semiconductor devices.

Latest Patents

Che-Chi Shih holds a patent for an isolation structure for semiconductor devices. This device includes a first semiconductor structure, a second semiconductor structure, and an isolation structure disposed between them. The isolation structure comprises a dielectric material with a dielectric constant higher than 8 and lower than 16. Additionally, a method for manufacturing the device is disclosed in the patent.

Career Highlights

Che-Chi Shih is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work at this company has allowed him to further his research and development efforts in semiconductor technology.

Collaborations

One of his notable collaborators is Szu-Hua Chen. Together, they have worked on various projects that enhance semiconductor device performance.

Conclusion

Che-Chi Shih's contributions to semiconductor technology through his innovative patents and collaborations highlight his importance in the field. His work continues to influence advancements in semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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