This inventor holds 1 USPTO granted patent. Top assignee: USA as Represented by Secretary of the Navy. Active years: 1982.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1982
Title: **Charles R. Parkerson: Innovator in Semiconductor Technology**
Introduction
Charles R. Parkerson, based in Green Mountain Falls, CO, is a recognized inventor in the field of semiconductor technology. With a focus on enhancing the quality of semiconductor materials, Parkerson has made significant contributions to the advancement of electronic components. His noteworthy invention revolves around optimizing the deposition of indium phosphide layers on gallium arsenide substrates.
Latest Patents
Parkerson holds a patent titled "Method for depositing heteroepitaxially InP on GaAs semi-insulating." This patented method provides a solution for depositing high-quality indium phosphide layers on gallium arsenide substrates. The process involves carefully controlling the growth of an interfacial quaternary alloy of In.sub.y Ga.sub.1-y As.sub.x P.sub.1-x, which plays a crucial role in achieving the desired material properties.
Career Highlights
Throughout his career, Charles R. Parkerson has worked with the United States of America, as represented by the Secretary of the Navy. His expertise and innovative spirit have contributed to various projects and advancements within the organization. Parkerson's work is pivotal, especially in areas where high-performance semiconductor materials are required.
Collaborations
During his endeavors, Parkerson has collaborated with notable professionals, including Herman H. Wieder. This partnership highlights the importance of teamwork in driving innovation and achieving significant advancements in semiconductor technology. Together, they have worked on projects that have the potential to shape future technology.
Conclusion
Charles R. Parkerson stands out as a skilled inventor with a strong background in semiconductor materials. His patented method for depositing heteroepitaxially InP on GaAs semi-insulating substrates marks a notable achievement in technological innovation. As his work continues to influence the field, Parkerson remains a key figure in the ongoing development of high-quality electronic materials.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile