The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 1982
Filed:
Jul. 05, 1977
Applicant:
Inventors:
Herman H Wieder, San Diego, CA (US);
Charles R Parkerson, Green Mountain Falls, CO (US);
Assignee:
The United States of America as represented by the Secretary of the Navy, Washington, DC (US);
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
156610 ; 156D / ;
Abstract
A method for depositing high quality indium phosphide layers heteroepitaxly on GaAs substrates by controlling the growth between them of an interfacial quaternary alloy of In.sub.y Ga.sub.1-y As.sub.x P.sub.1-x.
Wieder, Herman. (1982). Method for depositing heteroepitaxially inp on gaas semi-insulating (U.S. Patent No. 4314873). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4314873
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile