This inventor holds 1 USPTO granted patent. Top assignee: Signetics. Active years: 1986.
Company Filing History:
Years Active: 1986
Title: The Innovations of Charles J Vorst
Introduction
Charles J Vorst is a notable inventor based in Saratoga, CA (US). He has made significant contributions to the field of semiconductor technology. His innovative methods have paved the way for advancements in the industry.
Latest Patents
Vorst holds a patent for a "Method for growing an oxide layer on a silicon surface." This patent describes an improved technique for creating an oxide layer on a semiconductor body. The process involves initially providing a silicon surface, followed by the growth of a first oxide layer portion through a thermal oxidation process at temperatures below 1000 degrees Celsius. The semiconductor device is then annealed in a non-oxidizing environment at temperatures above 1000 degrees Celsius. Finally, a second oxide layer portion is grown over the first to complete the oxide layer. This method effectively addresses issues related to dopant outdiffusion and stress-related irregularities.
Career Highlights
Charles J Vorst has worked at Signetics, where he has contributed to various projects and innovations in semiconductor technology. His work has been instrumental in enhancing the performance and reliability of semiconductor devices.
Collaborations
Vorst has collaborated with notable coworkers such as Teh-Yi J Chen and Anjan Bhattacharyya. Their combined expertise has led to significant advancements in their field.
Conclusion
Charles J Vorst's contributions to semiconductor technology through his innovative patent demonstrate his commitment to advancing the industry. His work continues to influence the development of more efficient semiconductor devices.