The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 1986
Filed:
Jul. 02, 1984
Teh-Yi J Chen, Santa Clara, CA (US);
Anjan Bhattacharyya, Sunnyvale, CA (US);
William T Stacy, San Jose, CA (US);
Charles J Vorst, Saratoga, CA (US);
Albert Schmitz, Sunnyvale, CA (US);
Signetics Corporation, Sunnyvale, CA (US);
Abstract
In an improved method for growing an oxide layer on a silicon surface of a semiconductor body, the semiconductor body is first provided with a silicon surface. A first oxide layer portion is then grown over the silicon surface in a first thermal oxidation process at a temperature of less than about 1000.degree. C. The semiconductor device is then annealed in a nonoxidizing ambient at a temperature above about 1000.degree. C., and finally a second oxide layer portion is then grown over the first oxide layer portion in a second thermal oxidation process to complete the growth of the oxide layer. The silicon surface may be of either polycrystalline or monocrystalline material. This method avoids both the dopant outdiffusion problems associated with present high-temperature oxidation processes and the stress-related irregularities associated with known low-temperature oxidation processes.