Albert Schmitz

Title: Albert Schmitz: Innovator in Semiconductor Technology

Introduction

Albert Schmitz is a notable inventor based in Sunnyvale, CA, who has made significant contributions to the field of semiconductor technology. His innovative approach to growing oxide layers on silicon surfaces has paved the way for advancements in semiconductor devices.

Latest Patents

Schmitz holds a patent for a method for growing an oxide layer on a silicon surface. This improved method involves first providing a silicon surface on a semiconductor body. A first oxide layer portion is then grown over the silicon surface through a thermal oxidation process at a temperature of less than about 1000 degrees Celsius. Following this, the semiconductor device is annealed in a non-oxidizing ambient at a temperature above about 1000 degrees Celsius. Finally, a second oxide layer portion is grown over the first oxide layer portion to complete the growth of the oxide layer. This method effectively avoids the dopant outdiffusion problems associated with high-temperature oxidation processes and the stress-related irregularities linked to low-temperature oxidation processes.

Career Highlights

Albert Schmitz is currently employed at Signetics, where he continues to contribute to the field of semiconductor technology. His work has been instrumental in enhancing the efficiency and reliability of semiconductor devices.

Collaborations

Throughout his career, Schmitz has collaborated with notable colleagues, including Teh-Yi J Chen and Anjan Bhattacharyya. These collaborations have further enriched his contributions to the field.

Conclusion

Albert Schmitz's innovative methods in semiconductor technology demonstrate his commitment to advancing the industry. His patent for growing oxide layers on silicon surfaces is a testament to his expertise and dedication to innovation.