Essex Junction, VT, United States of America

Charles H Windisch, Jr


Average Co-Inventor Count = 3.0

ph-index = 3

Forward Citations = 51(Granted Patents)


Location History:

  • Essex Junction, VT (US) (2003 - 2006)
  • Essex Juction, VT (US) (2014)

Company Filing History:


Years Active: 2003-2014

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3 patents (USPTO):

Title: The Innovations of Charles H Windisch, Jr.

Introduction

Charles H Windisch, Jr. is a notable inventor based in Essex Junction, VT (US). He has made significant contributions to the field of semiconductor design, holding a total of 3 patents. His work focuses on optimizing integrated circuit design systems and methods.

Latest Patents

One of his latest patents is a method and system allowing for semiconductor design rule optimization. This patent discloses integrated circuit design systems and methods, wherein selected functional library elements are placed in a layout to meet product specifications. Selected hybrid fill-placeable library elements are also placed in that same layout to meet at least one feature density rule. Each hybrid fill-placeable library element comprises fill shapes corresponding to specific features subject to a density rule and a marker shape that provides an instruction to ignore any density rule violations within that element for purposes of design rule checking. The placement of these elements is performed to balance out density rule violations in functional library elements elsewhere in the layout, thereby avoiding the need for post-processing of the completed IC design to add fill shapes.

Another significant patent is for a system and method for power gating. This innovation involves gating power from global terrain to a voltage island while controlling leakage and managing transient power supply noise. The voltage island includes a field effect transistor (FET) power gate, a first connection to a global voltage source, and a second connection to a disable signal source. A power gate control circuit is responsive to the disable signal source for generating a test signal for selectively turning off the FET power gate as the disable signal source goes to a logical '1', and for turning on the FET power gate as the disable source goes to a logical '0'.

Career Highlights

Charles H Windisch, Jr. is currently employed at International Business Machines Corporation (IBM), where he continues to innovate in the field of semiconductor technology. His work has had a profound impact on the efficiency and effectiveness of integrated circuit designs.

Collaborations

He has collaborated with notable coworkers such as Douglas Willard Stout and Scott T Wameling, contributing to a dynamic and innovative work environment.

Conclusion

Charles H Windisch, Jr. is a distinguished inventor whose contributions to semiconductor design have advanced the field significantly. His patents reflect a commitment to innovation and excellence in technology.

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