This inventor holds 2 USPTO granted patents. Top assignees: Yale University, Other. Active years: 2010-2017.
Company Filing History:
1 out of 1,362 
1 out of 834,307 Years Active: 2010-2017
Title: Innovations of Charles H Ahn
Introduction
Charles H Ahn is a prominent inventor based in New Haven, CT (US). He has made significant contributions to the field of semiconductor and magnetoelectronic devices. With a total of 2 patents, Ahn's work has paved the way for advancements in technology.
Latest Patents
Ahn's latest patents include innovative designs for ferroelectric devices and magnetoelectronic devices. The first patent focuses on ferroelectric semiconductor devices that incorporate a ferroelectric layer made from a material that is not ferroelectric in bulk. This design allows for the promotion of ferroelectric switching in semiconductor devices, which can be utilized in various applications, including transistors and memory cells. The second patent addresses the use of perovskite manganite thin films in magnetic sensor devices and magnetoresistive random access memory (MRAM) devices. These films exhibit both planar Hall effect and biaxial magnetic anisotropy, enhancing the performance of magnetic bit cells.
Career Highlights
Throughout his career, Ahn has worked with esteemed institutions, including Yale University. His research has significantly impacted the development of advanced electronic devices.
Collaborations
Ahn has collaborated with notable individuals such as Lior Klein and Yosef Basson, contributing to the advancement of his innovative projects.
Conclusion
Charles H Ahn's contributions to the fields of ferroelectric and magnetoelectronic devices highlight his role as a leading inventor. His patents reflect a commitment to advancing technology and improving electronic device performance.