The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2010
Filed:
Dec. 15, 2004
Charles Ahn, New Haven, CT (US);
Lior Klein, Ramat-Gan 52488, IL;
Yosef Basson, Ganey Tiqva 55900, IL;
Xia Hong, New Haven, CT (US);
Jeng-bang Yau, Hamden, CT (US);
Charles Ahn, New Haven, CT (US);
Lior Klein, Ramat-Gan 52488, IL;
Yosef Basson, Ganey Tiqva 55900, IL;
Xia Hong, New Haven, CT (US);
Jeng-Bang Yau, Hamden, CT (US);
Other;
Abstract
The present invention is directed to the use of perovskite manganite thin films and other magnetic films that exhibit both planar Hall effect and biaxial magnetic anisotropy to form the active area in magnetic sensor devices and in magnetic bit cells used in magnetoresistive random access memory (MRAM) devices. The manganite thin films of the invention are ferromagnetic manganites of the formula RAMnO, wherein R is a rare-earth metal, A is an alkaline earth metal, and x is generally between about 0.15 and about 0.5.