Company Filing History:
Years Active: 1979-1980
Title: The Innovative Contributions of Charles G. Sodini in Semiconductor Memory Technology
Introduction: Charles G. Sodini, an esteemed inventor based in San Francisco, CA, has made significant contributions to the field of semiconductor memory technology. With a total of two patents to his name, Sodini's work has influenced the development of more efficient memory systems.
Latest Patents: Sodini's expertise is reflected in his latest patents, which have introduced groundbreaking advancements in memory technology. His first patent, titled "X-Y Addressable Memory," describes a novel memory cell design in which each cell integrates a charge storage element serially connected to an I-O (bit) line through CCD-type transfer gates. This innovative approach allows for precise communication between the selected memory cell and the bit line when an x-y address is activated.
The second patent, "One-Transistor Memory Cell with Enhanced Capacitance," presents a one-transistor memory cell that increases the depletion-layer capacitance of an MOS capacitor by enhancing the substrate dopant concentration. This process augments the effective capacitance of the memory cell through the combined capacitance of the insulator and the significantly improved depletion-layer or diode junction capacitance.
Career Highlights: Charles G. Sodini has established a remarkable career within the renowned Hewlett-Packard Company. His work has not only advanced technological innovations but also supported the efforts of various research initiatives in semiconductor technology.
Collaborations: Throughout his career, Sodini has collaborated with notable colleagues, including Theodore I. Kamins and James Robert Eaton. These partnerships have played a critical role in enhancing the depth and impact of their collective research and inventions.
Conclusion: Charles G. Sodini's contributions to semiconductor memory technology are a testament to his ingenuity and dedication as an inventor. His patents have paved the way for new technological advancements, ensuring that the memory systems of the future will be more efficient and effective.