Charles B Humphreys is a notable inventor based in Pleasant Valley, NY (US). He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on improving the efficiency and reliability of semiconductor devices.

Latest Patents

Humphreys' latest patents include a "Monitor for semiconductor diffusion operations." This invention features an electrical defect density monitor that utilizes a silicide of a formed transitional metal, such as platinum silicide, on a silicon substrate. This design enhances measurement sensitivity in high sheet resistivity areas, allowing for better assessment of the integrity of diffused regions and dielectric coatings. Another significant patent is the "Semiconductor structure having metallization inlaid in insulating layers." This innovation involves multiple levels of metallization inlaid in trenches formed in an insulating layer, optimizing the etching characteristics of glass and silicon nitride to create effective semiconductor structures.

Career Highlights

Charles B Humphreys is associated with the International Business Machines Corporation (IBM), where he has contributed to various projects in semiconductor technology. His expertise has been instrumental in advancing the capabilities of semiconductor devices.

Collaborations

Some of his notable coworkers include Barry N Casowitz and Michael D Cowan, who have collaborated with him on various projects within the semiconductor field.

Conclusion

Charles B Humphreys is a distinguished inventor whose work in semiconductor technology has led to significant advancements. His patents reflect a commitment to innovation and excellence in the industry.