The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 1976
Filed:
May. 06, 1974
Applicant:
Inventor:
Charles B Humphreys, Pleasant Valley, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B01J / ;
U.S. Cl.
CPC ...
29577 ; 29578 ; 29580 ; 29591 ; 29628 ;
Abstract
In a semiconductor structure with multiple levels of metallization on the surface, each metallization pattern is inlaid in trenches formed in an insulating layer. The surface of the metallization is flush with or somewhat lower than the surface of its associated insulating layer. In a preferred embodiment, the different etching characteristics of glass and silicon nitride are utilized to form the trenches in the glass layer. The glass comprises the insulating layer and the nitride forms the bottom of the trench.