The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 1978
Filed:
Mar. 11, 1977
Applicant:
Inventors:
Barry N Casowitz, Poughkeepsie, NY (US);
Michael D Cowan, Wappingers Falls, NY (US);
Charles B Humphreys, Essex Junction, VT (US);
Akella V Satya, Wappingers Falls, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R / ;
U.S. Cl.
CPC ...
324 62 ; 324 51 ; 3241 / ; 29574 ; 324 64 ;
Abstract
An electrical defect density monitor for semiconductor device fabrication utilizing a silicide of a formed transitional metal (such as platinum silicide) on a surface of a silicon substrate as a resistor in parallel with the resistance of the underlying substrate, including diffused regions, to improve measurement sensitivity of high sheet resistivity areas. The measurement can be employed for measuring the integrity of diffused regions and/or of dielectric coatings.