Charles A Paquette

Title: The Innovations of Charles A. Paquette

Introduction

Charles A. Paquette is a notable inventor based in St. Albans, Vermont. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent related to storage capacitors. His work has implications for the manufacturing processes used in modern electronics.

Latest Patents

One of Charles A. Paquette's key patents is for a silicon oxynitride storage node dielectric. This invention describes an annealing process carried out at 800°C in a wet O₂ ambient, which allows for the manufacture of a reliable storage capacitor. The dielectric layer is comprised of silicon oxynitride formed by low pressure chemical vapor deposition (LPCVD). The manufacturing process includes several steps: first, depositing the silicon oxynitride film by LPCVD; second, annealing in wet O₂ at 800°C or N₂ at 1000°C; third, forming an N-type region in the silicon substrate by As⁺ ion implantation through the silicon oxynitride film; fourth, annealing in wet O₂ at 800°C; and fifth, depositing an electrode.

Career Highlights

Charles A. Paquette has had a distinguished career, primarily working with International Business Machines Corporation (IBM). His expertise in semiconductor materials and processes has positioned him as a valuable asset in the field of electronics manufacturing.

Collaborations

Throughout his career, Charles has collaborated with several notable professionals, including John R. Abernathey and Pai-Hung Pan. These collaborations have further enhanced the impact of his work in the industry.

Conclusion

Charles A. Paquette's contributions to semiconductor technology, particularly through his patent on silicon oxynitride storage node dielectrics, demonstrate his innovative spirit and technical expertise. His work continues to influence the manufacturing processes in the electronics sector.