International Business Machines Corporation

Charles A Paquette

Pai-Hung Pan

David L Johnson

John R Abernathey

An annealing process carried out at 800.degree. C. in a wet O.sub.2 ambient permits the manufacture of a reliable storage capacitor wherein the dielectric layer is comprised of silicon oxynitride formed by low pressure chemical vapor deposition (LPCVD). The manufacturing process includes first depositing the silicon oxynitride film by LPCVD, second annealing in wet O.sub.2 at 800.degree. C. or N.sub.2 at 1000.degree. C., third forming an N-type region in the silicon substrate by As.sup.+ ion implantation through the silicon oxynitride film, fourth annealing in wet O.sub.2 at 800.degree. C., and fifth depositing an electrode.

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Saint Albans, VT, United States of America

Charles A Paquette