Quanzhou, China

Chaoxiong Wang


Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: The Innovations of Chaoxiong Wang

Introduction

Chaoxiong Wang is a notable inventor based in Quanzhou, China. He has made significant contributions to the field of integrated circuits, particularly in dynamic random access memory (DRAM) technology. His innovative work has led to the development of a unique DRAM device that enhances performance and efficiency.

Latest Patents

Chaoxiong Wang holds a patent for a "Dynamic random access memory device with active regions of different profile roughness and method for forming the same." This patent describes a DRAM that includes a substrate with a plurality of first active regions arranged end-to-end along a specific direction. Additionally, it features second active regions positioned between the first active regions, each having distinct sidewall profiles that optimize the device's functionality.

Career Highlights

Wang is currently associated with Fujian Jinhua Integrated Circuit Co., Ltd., where he continues to push the boundaries of memory technology. His work has been instrumental in advancing the capabilities of DRAM devices, making them more efficient and effective for various applications.

Collaborations

Chaoxiong Wang has collaborated with esteemed colleagues such as Yaoguang Xu and Hsien-Shih Chu. These partnerships have fostered a creative environment that encourages innovation and the sharing of ideas.

Conclusion

Chaoxiong Wang's contributions to the field of DRAM technology exemplify the spirit of innovation. His patent and ongoing work at Fujian Jinhua Integrated Circuit Co., Ltd. highlight his commitment to advancing memory technology.

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