The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 17, 2025

Filed:

Jul. 28, 2021
Applicant:

Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, CN;

Inventors:

Yaoguang Xu, Jinjiang, CN;

Hsien-Shih Chu, Kaohsiung, TW;

Yun-Fan Chou, Taichung, TW;

Yu-Cheng Tung, Kaohsiung, TW;

Chaoxiong Wang, Quanzhou, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H01L 21/0338 (2013.01); H01L 21/0332 (2013.01); H01L 21/0335 (2013.01); H01L 21/0337 (2013.01); H10B 12/00 (2023.02);
Abstract

A DRAM includes a substrate, a plurality of first active regions disposed on the substrate and arranged end-to-end along the first direction, and a plurality of second active regions disposed between the first active regions and arranged end-to-end along the first direction. The second active regions respectively have a first sidewall adjacent to a first trench between the second active region and one of the first active regions and a second sidewall adjacent to a second trench between the ends of the first active regions, wherein the second sidewall is taper than the first sidewall in a cross-sectional view.


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