Xuzhou, China

Chaoquan Yang

This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignee: Jiangsu Leuven Instruments Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chaoquan Yang. Retrieved from https://idiyas.com/inventor/chaoquan-yang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

 

Average Co-Inventor Count = 8.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Chaoquan Yang: Inventor of an Ion Beam Etching Machine Structure

Introduction

Chaoquan Yang is an inventor based in Xuzhou, China. His work includes a patented lower-electrode structure designed for an ion beam etching machine. The available information lists 1 patent associated with him.

Latest Patents

Yang’s patent, “Ion Beam Etching Machine and Lower Electrode Structure Thereof,” describes a lower-electrode assembly with an electrode plate, a ring-pressing mechanism, and a lifting mechanism. The ring-pressing mechanism supports the member being etched, while the lifting mechanism moves it up and down relative to the electrode plate.

The structure also includes a position-measurement mechanism that measures how far the ring-pressing mechanism descends. Based on the measurement feedback, the lifting mechanism can stop the descent. This arrangement is intended to help prevent the member being etched from fragmenting and to improve product yield.

Career Highlights

The provided information associates Yang with Jiangsu Leuven Instruments Co., Ltd. The patent’s focus on positioning and controlled movement reflects an engineering approach to addressing equipment reliability and manufacturing yield in ion beam etching.

Collaborations

Shiran Cheng and Yaoyao Zhang are listed as Yang’s coworkers.

Conclusion

Chaoquan Yang’s patent presents a measured-lifting design for an ion beam etching machine that aims to reduce fragmentation and improve product yield.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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