Chao Jin

Title: Chao Jin: Innovator in Capacitor Technology

Introduction

Chao Jin is a prominent inventor based in Singapore, known for his significant contributions to capacitor technology. With a total of 12 patents to his name, he has made remarkable advancements in the field of electrical engineering.

Latest Patents

One of Chao Jin's latest patents is titled "Parallel-connected trench capacitor structure with multiple electrode layers and method of fabricating the same." This innovative structure involves a substrate with a trench embedded within it. Numerous electrode layers conformally fill and cover the trench, with each layer formed of nth electrode layers, where n is a positive integer from 1 to M, and M is not less than 3. The design ensures that the nth electrode layer with a smaller n is closer to the sidewall of the trench. When n equals M, the Mth electrode layer fills the center of the trench, aligning its top surface with that of the substrate. A capacitor dielectric layer is placed between adjacent electrode layers, with conductive plugs contacting the odd and even numbered nth electrode layers.

Career Highlights

Chao Jin has worked with notable companies in the semiconductor industry, including Marvell International Limited and United Microelectronics Corporation. His experience in these organizations has allowed him to refine his skills and contribute to cutting-edge technologies.

Collaborations

Chao Jin has collaborated with esteemed colleagues such as Weiya Xi and Khai Leong Yong, further enhancing his innovative work in capacitor technology.

Conclusion

Chao Jin's contributions to the field of capacitor technology through his patents and collaborations highlight his role as a leading inventor in Singapore. His work continues to influence advancements in electrical engineering and semiconductor design.