Company Filing History:
Years Active: 2005
Title: Chao-Hsuing Wang: Innovator in Semiconductor Technology
Introduction
Chao-Hsuing Wang is a prominent inventor based in Hsin-Chu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent related to strained channel devices.
Latest Patents
Wang holds a patent for a device titled "Strained channel on insulator device." This semiconductor device includes a substrate, such as a silicon substrate, with an insulating layer, like silicon dioxide, disposed thereon. A first semiconducting material layer, for example, SiGe, is placed on the insulating layer, while a second semiconducting material layer, such as Si, is positioned on the first layer. The unique aspect of this invention is that the first and second semiconducting material layers have different lattice constants, resulting in the first layer being compressive and the second layer being tensile. This innovation enhances the performance of semiconductor devices.
Career Highlights
Chao-Hsuing Wang is currently employed at Taiwan Semiconductor Manufacturing Company Ltd., a leading firm in the semiconductor industry. His work has been instrumental in advancing semiconductor technologies, contributing to the company's reputation for innovation and excellence.
Collaborations
Wang has collaborated with notable colleagues, including Chung-Hu Ge and Chien-Chao Huang. These partnerships have fostered a collaborative environment that encourages the exchange of ideas and advancements in semiconductor research.
Conclusion
Chao-Hsuing Wang is a key figure in semiconductor innovation, with a focus on strained channel devices. His contributions through patents and collaborations continue to shape the future of semiconductor technology.