The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2005
Filed:
Apr. 03, 2003
Chung-hu GE, Taipei, TW;
Chao-hsuing Wang, Hsin-Chu, TW;
Chien-chao Huang, Hsin-Chu, TW;
Wen-chin Lee, Hsin-Chu, TW;
Chenming HU, Hsin-Chu, TW;
Chung-Hu Ge, Taipei, TW;
Chao-Hsuing Wang, Hsin-Chu, TW;
Chien-Chao Huang, Hsin-Chu, TW;
Wen-Chin Lee, Hsin-Chu, TW;
Chenming Hu, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A semiconductor deviceincludes a substrate(e.g., a silicon substrate) with an insulating layer(e.g., an oxide such as silicon dioxide) disposed thereon. A first semiconducting material layer(e.g., SiGe) is disposed on the insulating layerand a second semiconducting material layer(e.g., Si) is disposed on the first semiconducting material layer. The first and second semiconducting material layersandpreferably have different lattice constants such that the first semiconducting material layeris compressive and the second semiconducting material layer is tensile