Changzhi Sun

Title: Changzhi Sun: Innovator in Three-Dimensional Memory Devices

Introduction

Changzhi Sun is a prominent inventor based in Hubei, China. He has made significant contributions to the field of memory devices, particularly through his innovative patent related to three-dimensional memory technology. His work is instrumental in advancing the capabilities of memory storage solutions.

Latest Patents

Changzhi Sun holds a patent titled "Channel structures for three-dimensional memory devices and methods for forming the same." This patent describes a method for forming a three-dimensional memory device that includes creating an alternating dielectric stack on a substrate. The process involves forming an opening that extends partially through the dielectric stack, exposing its sidewalls. A protection layer is then disposed in the opening and on the exposed sidewalls. The method further extends the opening through the dielectric stack and forms channel layers within the extended opening. This innovative approach enhances the efficiency and performance of memory devices.

Career Highlights

Changzhi Sun is associated with Yangtze Memory Technologies Co., Ltd., where he applies his expertise in memory technology. His work at this company has positioned him as a key player in the development of advanced memory solutions. With a focus on innovation, he continues to push the boundaries of what is possible in the field of memory devices.

Collaborations

Changzhi Sun collaborates with fellow inventor Xiaolong Du, contributing to the advancement of technology in their field. Their partnership exemplifies the importance of teamwork in driving innovation.

Conclusion

Changzhi Sun's contributions to three-dimensional memory devices highlight his role as a leading inventor in the technology sector. His innovative patent and collaboration with industry peers underscore the significance of his work in shaping the future of memory technology.