Hwaseong, South Korea

Changwoo Noh

This inventor holds 1 USPTO granted patent and 8 published patent applications. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Changwoo Noh. Retrieved from https://idiyas.com/inventor/changwoo-noh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2022

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1 patent (USPTO):Explore Patents

Title: Changwoo Noh - Innovator in Semiconductor Technology

Introduction

Changwoo Noh is an inventor based in Suwon-si, South Korea. He has made significant contributions to the field of semiconductor technology. Although he currently holds no granted patents, his work in developing innovative semiconductor devices showcases his expertise and potential in this area.

Latest Patent Applications

Changwoo Noh's latest patent applications include two notable inventions. The first application is for a "THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME." This invention describes a three-dimensional semiconductor device that features a first active region with a first channel pattern and a first source/drain pattern. It also includes a second active region with a second channel pattern and a second source/drain pattern, along with a gate electrode and a bottom active contact. The design aims to enhance the performance and efficiency of semiconductor devices.

The second application is for a "SEMICONDUCTOR DEVICE." This device comprises a substrate with source/drain patterns, a channel pattern made up of multiple semiconductor patterns, and an interlayer insulating layer. The innovative structure aims to improve the functionality and reliability of semiconductor devices.

Conclusion

Changwoo Noh's work in semiconductor technology, particularly through his latest patent applications, highlights his innovative approach and dedication to advancing the field. His contributions may pave the way for future developments in semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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