The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 22, 2022

Filed:

Mar. 31, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Changwoo Noh, Hwaseong-si, KR;

Munhyeon Kim, Hwaseong-si, KR;

Hansu Oh, Suwon-si, KR;

Sungman Whang, Yongin-si, KR;

Dongwon Kim, Seongnam-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01); H01L 29/423 (2006.01); H01L 29/165 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 29/6656 (2013.01); H01L 21/31144 (2013.01); H01L 29/42392 (2013.01); H01L 29/6653 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01); H01L 29/78651 (2013.01); H01L 29/78654 (2013.01); H01L 29/78696 (2013.01); H01L 29/165 (2013.01); H01L 29/7848 (2013.01);
Abstract

Semiconductor devices and methods of fabricating the same are provided. The method includes forming on a substrate an active pattern that protrudes from the substrate and extends in one direction; forming on the active pattern a sacrificial gate structure that extends in a direction intersecting the active pattern; forming on a side surface of the sacrificial gate structure a first spacer including a first portion at a lower level than a top surface of the active pattern and a second portion on the first portion, and reducing a thickness of the second portion of the first spacer.


Find Patent Forward Citations

Loading…