Anhui, China

Changqian Xie

This inventor holds 1 USPTO granted patent. Top assignee: Lontium Semiconductor Corporation. Active years: 2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Changqian Xie. Retrieved from https://idiyas.com/inventor/changqian-xie

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 11.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2022

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1 patent (USPTO):Explore Patents

Title: Changqian Xie: Innovator in Storage Device Technology

Introduction

Changqian Xie is a notable inventor based in Anhui, China. He has made significant contributions to the field of storage devices, particularly through his innovative patent. His work focuses on enhancing the efficiency and functionality of data storage systems.

Latest Patents

Changqian Xie holds a patent for a "Storage device and method for manufacturing the same." This invention includes a conversion apparatus that integrates various layers, such as a DDR storage layer, a DDR interface layer, a conversion logic circuit layer, and a peripheral interface layer. The design allows for the conversion of storage logic between DDR and GDDR formats, optimizing data processing and transfer.

Career Highlights

Changqian Xie is associated with Lontium Semiconductor Corporation, where he applies his expertise in semiconductor technology. His innovative approach has led to advancements in storage device manufacturing, contributing to the company's reputation in the industry.

Collaborations

Some of his coworkers include Xianghao Guo and Chuanxing Liu, who collaborate with him on various projects within the company.

Conclusion

Changqian Xie's contributions to storage device technology exemplify his innovative spirit and dedication to advancing the field. His patent reflects a significant step forward in data storage solutions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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