The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2022
Filed:
May. 12, 2020
Lontium Semiconductor Corporation, Anhui, CN;
Xianghao Guo, Anhui, CN;
Chuanxing Liu, Anhui, CN;
Feng Chen, Anhui, CN;
Hongfeng Xia, Anhui, CN;
Jin Su, Anhui, CN;
Haowei Guan, Anhui, CN;
Diansheng Ren, Anhui, CN;
Lianliang Tai, Anhui, CN;
Dafeng Zhou, Anhui, CN;
Guangren Li, Anhui, CN;
Changqian Xie, Anhui, CN;
LONTIUM SEMICONDUCTOR CORPORATION, Anhui, CN;
Abstract
A conversion apparatus, a storage device and a method for manufacturing the same are provided. The storage device may include a DDR storage layer, a DDR interface layer, a conversion logic circuit layer, and a peripheral interface layer. The peripheral interface layer may include a GDDR interface layer or a PCIe interface layer. The conversion logic circuit layer may process, by using DDR storage logic, data obtained through the peripheral interface layer and transfer processed data to the DDR interface layer, or process, by using GDDR storage logic, data obtained through the DDR interface layer and transfer processed data to the peripheral interface Layer. The DDR storage layer may be connected to the DDR interface layer, so that the conversion logic circuit layer can convert the storage logic of the data from DDR to GDDR or from GDDR to DDR.