Company Filing History:
Years Active: 2022
Title: Haowei Guan: Innovator in Storage Device Technology
Introduction
Haowei Guan is a notable inventor based in Anhui, China. He has made significant contributions to the field of storage device technology. His innovative work has led to the development of a unique storage device and manufacturing method.
Latest Patents
Haowei Guan holds 1 patent for a storage device and method for manufacturing the same. This patent describes a conversion apparatus that includes a DDR storage layer, a DDR interface layer, a conversion logic circuit layer, and a peripheral interface layer. The design allows for efficient data processing and conversion between DDR and GDDR storage logic.
Career Highlights
Guan is currently employed at Lontium Semiconductor Corporation, where he continues to advance his research and development efforts. His work focuses on enhancing storage device performance and functionality.
Collaborations
Some of his coworkers include Xianghao Guo and Chuanxing Liu, who contribute to the innovative environment at Lontium Semiconductor Corporation.
Conclusion
Haowei Guan's contributions to storage device technology exemplify the impact of innovative thinking in the tech industry. His patent reflects a commitment to advancing data storage solutions.