Yongin, South Korea

Changha Kwak

This inventor holds 2 USPTO granted patents and 2 published patent applications. Top assignee: Samsung Display Co., Ltd.. Active years: 2024-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Changha Kwak. Retrieved from https://idiyas.com/inventor/changha-kwak

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 2 

% Patents Active = 100.0

Average Co-Inventor Count = 14.0

ph-index = 1


Company Filing History:


Years Active: 2024-2025

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2 patents (USPTO):Explore Patents

Title: Changha Kwak: Inventor in Display Technology

Introduction

Changha Kwak is an inventor based in Yongin, South Korea. His patent work includes thin-film transistor technology and display apparatus manufacturing. He is associated with Samsung Display Co., Ltd. The provided information lists 2 patents.

Latest Patents

Kwak’s listed patent concerns a thin-film transistor, a display apparatus incorporating it, and a method for manufacturing the apparatus. The disclosed substrate includes a buffer layer containing an inorganic insulating layer and a thin-film transistor. The patent describes limiting the area ratio of the buffer layer’s N—H bond peak to 0.5% or less of the total peak area measured by Fourier transform infrared spectroscopy (FTIR).

The same patent title and description were provided twice. They describe a display-related invention focused on the composition of the buffer layer and its use in a thin-film transistor substrate.

Career Highlights

Kwak’s listed invention addresses components and manufacturing methods used in display apparatus. His work is associated with Samsung Display Co., Ltd., a company active in display technology.

Collaborations

The provided information identifies Nalae Lee and Joohyeon Jo as Kwak’s coworkers.

Conclusion

Changha Kwak’s listed patent work focuses on thin-film transistor substrates and display manufacturing, with particular attention to the buffer layer’s properties.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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