The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2024
Filed:
Sep. 28, 2020
Samsung Display Co., Ltd., Yongin-Si, KR;
Jinsuk Lee, Yongin-si, KR;
Jin Jeon, Yongin-si, KR;
Sugwoo Jung, Yongin-si, KR;
Shinbeom Choi, Yongin-si, KR;
Youngin Hwang, Yongin-si, KR;
Byungno Kim, Yongin-si, KR;
Heeyeon Kim, Yongin-si, KR;
Kohei Ebisuno, Yongin-si, KR;
Nalae Lee, Yongin-si, KR;
Illhwan Lee, Yongin-si, KR;
Jongmin Lee, Yongin-si, KR;
Joohyeon Jo, Yongin-si, KR;
Changha Kwak, Yongin-si, KR;
Yongseon Jo, Yongin-si, KR;
Samsung Display Co., Ltd., Yongin-Si, KR;
Abstract
Provided are a thin film transistor substrate which include a substrate, a buffer layer and a thin film transistor, a display apparatus including the thin film transistor substrate, and a method of manufacturing the display apparatus including the thin film transistor substrate. The buffer layer includes an inorganic insulating layer. An area ratio of a peak corresponding to an N—H bond in the buffer layer is 0.5% or less based on a total peak area in a Fourier transform infrared spectroscopy (FTIR).