This inventor holds 3 USPTO granted patents. Top assignee: Hynix Semiconductor Inc.. Active years: 2003.
Location History:
- Kyoungki-do, KR (2003)
- Ichon-shi, KR (2003)
Company Filing History:
Years Active: 2003
Title: Chang Woo Ryoo: Innovator in Semiconductor Technology
Introduction
Chang Woo Ryoo is a prominent inventor based in Kyoungki-do, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on improving the efficiency and performance of semiconductor devices.
Latest Patents
Chang Woo Ryoo's latest patents include innovative methods for forming transistors and silicide layers in semiconductor devices. One of his notable patents is a method for forming a transistor of a semiconductor device. This method involves creating channel layers of different conductive types, performing high-temperature thermal processes, and forming an epitaxial channel structure with a super-steep-retrograde &dgr;-doped layer. Another significant patent is for forming a silicide layer of a semiconductor memory device. This process includes two thermal annealing steps to create a shallow junction, minimizing electrical property deterioration and enhancing device operation speed.
Career Highlights
Chang Woo Ryoo is currently employed at Hynix Semiconductor Inc., where he continues to advance semiconductor technology. His expertise in the field has led to the development of methods that significantly improve device performance and reliability.
Collaborations
Throughout his career, Chang Woo Ryoo has collaborated with notable colleagues, including Yong Sun Sohn and Jeong Youb Lee. These partnerships have fostered innovation and contributed to the advancement of semiconductor technologies.
Conclusion
Chang Woo Ryoo is a key figure in semiconductor innovation, with a focus on enhancing device performance through his patented methods. His contributions continue to shape the future of semiconductor technology.